41,185 Shares of Roundhill Memory ETF $DRAM Purchased by Rye Brook Capital LLC

Rye Brook Capital LLC acquired a new position in Roundhill Memory ETF (BATS:DRAM) in the third quarter, Holdings Channel.com reports. The institutional investor acquired 41,185 shares of the ETF’s stock, valued at approximately $2,486,000. Roundhill Memory ETF comprises 1.6% of Rye Brook Capital LLC’s holdings, making the stock its 19th largest holding.

Several other institutional investors also recently modified their holdings of DRAM. Box Hill Private Wealth LLC acquired a new position in shares of Roundhill Memory ETF in the third quarter valued at $1,022,000. Noble Wealth Management PBC bought a new stake in Roundhill Memory ETF in the 3rd quarter valued at $1,220,000. Envestnet Asset Management Inc. acquired a new position in shares of Roundhill Memory ETF in the 2nd quarter valued at $1,409,000. Silicon Valley Capital Partners bought a new position in shares of Roundhill Memory ETF during the 2nd quarter worth about $195,000. Finally, Bouchey Financial Group Ltd. acquired a new stake in shares of Roundhill Memory ETF during the 2nd quarter valued at about $34,615,000.

Roundhill Memory ETF Stock Up 0.8%

BATS:DRAM traded up $0.49 during mid-day trading on Wednesday, hitting $60.01. The company’s stock had a trading volume of 21,546,263 shares, compared to its average volume of 42,595,320. The company has a fifty day simple moving average of $57.24. Roundhill Memory ETF has a fifty-two week low of $26.14 and a fifty-two week high of $81.34.

Roundhill Memory ETF (BATS: DRAM) is an exchange-traded fund offered by Roundhill Investments that provides targeted exposure to the memory semiconductor industry. Listed on the Cboe BZX Exchange under the ticker DRAM, the fund is intended to give investors access to companies whose primary business activities are connected to memory chips and related technologies.

The fund focuses on firms operating across the memory semiconductor supply chain, including companies involved in design and development of DRAM and NAND memory, wafer fabrication, packaging and testing, and the manufacture of semiconductor capital equipment and materials.